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K6F8016R6B Datasheet

Part Number K6F8016R6B
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet K6F8016R6B DatasheetK6F8016R6B Datasheet (PDF)

K6F8016R6B Family Document Title CMOS SRAM www.DataSheet4U.com 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date July 25, 2001 Remark Preliminary 1.0 Finalize October 24, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you ha.

  K6F8016R6B   K6F8016R6B






Part Number K6F8016R6D
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet K6F8016R6B DatasheetK6F8016R6D Datasheet (PDF)

K6F8016R6D Family Document Title Preliminary CMOS SRAM www.DataSheet4U.com 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 0.1 Initial draft Revised - Updated DC parameters (ICC1, ICC2, ISB1, IDR) - Deleted 55ns Speed bin Draft Date April 26, 2004 September 13, 2004 Remark Preliminary Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specification.

  K6F8016R6B   K6F8016R6B







Part Number K6F8016R6A
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description CMOS SRAM
Datasheet K6F8016R6B DatasheetK6F8016R6A Datasheet (PDF)

K6F8016R6A Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft 0.1 Revise - Change package type from FBGA to TBGA 1.0 Finalize - Improved ICC1 from 3 to 2mA - Removed ICC, ISB 1.01 Revise - Errata correction for finalized year 2000 to 2001 2.0 Revise - Isb1 change : 15µA to 10µA - IDR change : 8µA to 6µA - Icc2 change : 25mA to 20mA for 70ns product 20mA to 18mA for 85ns product - Remove "A1 .

  K6F8016R6B   K6F8016R6B







512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F8016R6B Family Document Title CMOS SRAM www.DataSheet4U.com 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date July 25, 2001 Remark Preliminary 1.0 Finalize October 24, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.0 October 2001 K6F8016R6B Family FEATURES • Process Technology: Full CMOS • Organization: 512K x16 • Power Supply Voltage: 1.65~2.2V • Low Data Retention Voltage: 1.0V(Min) • Three State Outputs • Package Type: 48-TBGA-6.00x7.00 CMOS SRAM www.DataSheet4U.com GENERAL DESCRIPTION The K6F8016R6B families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. 512K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM PRODUCT FAMILY Power Dissipation Product Family K6F8016R6B-F Operating Temperature Industrial(-40~85°C) Vcc Range 1.65~2.2V Speed 701)/85ns Standby (ISB1, Typ.) 0.5µ A2) Operating (ICC1, Max) 2mA PKG Type 48-TBGA-6.00x7.00 1. The paramete.


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