K6F8016U6B Family
Document Title
CMOS SRAM
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision...
K6F8016U6B Family
Document Title
CMOS SRAM
512K x16 bit Super Low Power and Low
Voltage Full
CMOS Static RAM
Revision History
Revision No. History
0.0 Initial draft
Draft Date
July 24, 2001
Remark
Preliminary
1.0
Finalize - ICC2 change : 30mA to 28mA for 55ns product 25mA to 22mA for 70ns product
September 27, 2001
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.0 September 2001
K6F8016U6B Family
FEATURES
Process Technology: Full
CMOS Organization: 512K x16 Power Supply
Voltage: 2.7~3.3V Low Data Retention
Voltage: 1.5V(Min) Three State Outputs Package Type: 48-TBGA-6.00x7.00
CMOS SRAM
512K x 16 bit Super Low Power and Low
Voltage Full
CMOS Static RAM
GENERAL DESCRIPTION
The K6F8016U6B families are fabricated by SAMSUNG′s advanced full
CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention
voltage for battery back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation Product Family K6F8016U6B-F Operating Temperature Industrial(-40~85°C) Vcc Range 2.7~3.3V Speed 551)/70ns Standby (ISB1, Typ.) 0.5µA2) Operating (ICC1, Max) 2mA PKG Ty...
