K6R1004C1C

www.DataSheet4U.com PRELIMINARY PRELIMINARY CMOS SRAM K6R1004C1C-C/C-L, K6R1004C1C-I/C-P Document Title 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). Revision History Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Release to Final Data Sheet. 1.1. Delete Preliminary. Add 10ns & Low Power Ver. Delete 20ns speed bin Draft Data Aug. 5. 1998 Mar. 3. 1999 Remark Preliminary Final Rev. 2.0 Rev. 3.0 Apr. 24. 2000 Sep. 24. 2001 Final Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- Revision 3.0 September 2001 PRELIMINARY PRELIMINARY K6R1004C1C-C/C-L, K6R1004C1C-I/C-P 256K x 4 Bit (with OE) High-Speed CMOS Static RAM FEATURES Fast Access Time 10,12,15ns(Max.) Low Power Dissipation Standby (TTL) : 30mA(Max.) (CMOS) : 5mA(Max.) 0.5mA(Max.) L-Ver. only Operating K6R1004C1C-10 : 75mA(Max.) K6R1004C1C-12 : 70mA(Max.) K6R1004C1C-15 : 68mA(Max.) Single 5.0V±10% Power Supply TTL Compatible Inputs and Outputs I/O Compatible with 3.3V Device Fully Static Operation - No Clock or Refresh required Three State Outputs 2V Minimum Data Retention: L-ver. only Center Power/Ground Pin Configuration St...