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PRELIMPreliminaryPPPPPPPPPINARY
CMOS SRAM
K6R4016V1C-C/C-L, K6R4016V1C-I/C-P
Document Title
256Kx1...
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PRELIMPreliminaryPPPPPPPPPINARY
CMOS SRAM
K6R4016V1C-C/C-L, K6R4016V1C-I/C-P
Document Title
256Kx16 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. 1.1 Removed Low power Version. 1.2 Removed Data Retention Characteristics. 1.3 Changed ISB1 to 20mA Relax D.C parameters. Item ICC 12ns 15ns 20ns Previous 180mA 175mA 170mA Current 200mA 195mA 190mA Mar. 27. 2000 Final Draft Data Feb. 12. 1999 Mar. 29. 1999 Remark Preliminary Preliminary
Rev. 2.0
Aug. 19. 1999
Preliminary
Rev. 3.0
3.1 Delete Preliminary 3.2 Update D.C parameters and 10ns part. Previous ICC Isb Isb1 10ns 12ns 200mA 70mA 20mA 15ns 195mA 20ns 190mA
ICC 160mA 150mA 140mA 130mA
Current Isb 60mA
Isb1 10mA
Rev. 4.0 Rev. 5.0
Add Low Power-Ver. Delete 20ns speed bin
Apr. 24. 2000 Sep. 24. 2001
Final Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 5.0 September 2001
www.DataSheet4U.com
PRELIMPreliminaryPPPPPPPPPINARY
CMOS SRAM
K6R4016V1C-C/C-L, K6R4016V1C-I/C-P
256K x 16 Bit High-Speed
CMOS Static RAM
FEATURES
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