K6T8016C3M Family
Document Title
512Kx16 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History...
K6T8016C3M Family
Document Title
512Kx16 bit Low Power
CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0 1.0 Initial draft Finalize - Adopt New Code system. - Improve VIN, VOUT max. on A ’ BSOLUTE MAXIMUM RATINGS’from 7.0V to VCC+0.5V. Errata correction
Draft Date
June 18, 1999 February 29, 2000
Remark
Advance Final
www.DataSheet4U.com
1.01
April 17, 2000
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.01 April 2000
K6T8016C3M Family
512Kx16 bit Low Power
CMOS Static RAM
FEATURES
Process Technology: TFT Organization: 512K x16 Power Supply
Voltage: 4.5~5.5V Low Data Retention
Voltage: 2.0V(Min) Three state output and TTL Compatible Package Type: 44-TSOP2-400F/R
CMOS SRAM
GENERAL DESCRIPTION
The K6T8016C3M families are fabricated by SAMSUNG′s advanced
CMOS process technology. The families support industrial operating temperature ranges for user flexibility of system design. The families also support low data retention
voltage for battery back-up operation with low data retention current.
PRO DUCT FAMILY
Power Dissipation Product Family www.DataSheet4U.com K6T8016C3M-B K6T8016C3M-F Operating Temperature Commercial(0~70°C) Industrial(-40~85 °C) Vcc Range Speed Standby (ISB1, Max) 50µA 8...
