K6X4016C3F Family
Document Title
256Kx16 bit Low Power full CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0....
K6X4016C3F Family
Document Title
256Kx16 bit Low Power full
CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 0.1
History
Initial draft Revised Added Commercial Product. Deleted 44-TSOP2-400R Package Type. Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 10mA to 7mA - Changed ICC2 from 50mA to 30mA - Changed ISB from 3mA to 0.4mA - Changed IDR(Commercial) from 15µA to 12µA - Changed IDR(industrial) from 20µA to 12µA - Changed IDR(Automotive) from 30µA to 25µA
Draft Date
July 26, 2002 November 29, 2002
Remark
Preliminary Preliminary
1.0
September 16, 2003 final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.0 September 2003
K6X4016C3F Family
256Kx16 bit Low Power full
CMOS Static RAM
FEATURES
Process Technology: Full
CMOS Organization: 256Kx16 Power Supply
Voltage: 4.5~5.5V Low Data Retention
Voltage: 2V(Min) Three state output and TTL compatible Package Type: 44-TSOP2-400F
CMOS SRAM
GENERAL DESCRIPTION
The K6X4016C3F families are fabricated by SAMSUNG′s advanced full
CMOS process technology. The families support various operating temperature range and small package types for user flexibility of system design. The families also support low data retention
voltage for battery back-up op...