K6X8008C2B

K6X8008C2B Family Document Title 1Mx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial draft Revised - Deleted 44-TSOP2-400R package type. - Added Commercial product. Finalized - Changed ICC from 10mA to 6mA - Changed ICC1 from 10mA to 7mA - Changed ICC2 from 50mA to 35mA - Changed ISB from 3mA to 0.4mA - Changed ISB1(Commercial) from 40µA to 25µA - Changed ISB1(industrial) from 40µA to 25µA - Changed ISB1(Automotive) from 50µA to 40µA - Changed IDR(Commercial) from 30µA to 15µA - Changed IDR(industrial) from 30µA to 15µA - Changed IDR(Automotive) from 40µA to 30µA Draft Date October 31, 2002 December 11, 2002 Remark Preliminary Preliminary 1.0 September 16, 2003 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.0 September 2003 K6X8008C2B Family 1Mx8 bit Low Power full CMOS Static RAM FEATURES Process Technology: Full CMOS Organization: 1M x8 Power Supply Voltage: 4.5~5.5V Low Data Retention Voltage: 2.0V(Min) Three state output and TTL Compatible Package Type: 44-TSOP2-400F CMOS SRAM GENERAL DESCRIPTION The K6X8008C2B families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support various operating temperature...