K882

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK882 2SK882 FM Tuner, VHF RF Amplifier Applications Unit: mm Low reverse transfer capacitance: Crss = 0.025 pF (typ.) Low noise figure: NF = 1.7dB (typ.) High power gain: Gps = 28dB (typ.) Recommend operation voltage: 5~15 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source voltage VGS ±5 V Drain current ID 30 mA Drain power dissipation PD 100 mW Channel temperature Tch 125 °C Storage temperature Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high JEDEC ― temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEITA TOSHIBA SC-70 2-2E1C operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 0.006 g (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Gate leakage current Drain-source voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Power gain Noise f...