KDF60N04P
N-Channel MOSFET
Preliminary
Features
60V,65A,Rds(on)(typ)=8.5mΩ@Vgs=10V High Ruggedness Fast Switching 100% Avalanche Tested Improved dv/dt Capability
General Description
This Power MOSFET is produced using KEDA’s advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for low voltage application such as automotive,DC/DC converters,and high eff.
N-channel MOSFET
KDF60N04P
N-Channel MOSFET
Preliminary
Features
60V,65A,Rds(on)(typ)=8.5mΩ@Vgs=10V High Ruggedness Fast Switching 100% Avalanche Tested Improved dv/dt Capability
General Description
This Power MOSFET is produced using KEDA’s advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for low voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM VGS EAS PD
Drain-Source Voltage Continuous Drain Current (TC=25 ℃) Continuous Drain Current (TC=100℃) Pulsed Drain Current (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Maximum Power Dissipation (TC=25 ℃) Derating Factor above 25℃
TJ TSTG
Operating Junction Temperature Range Storage Temperature Range
Thermal Characteristics
Symbol.