SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
KDS160E
SILICON EPITAXIAL PLANAR DIODE
FEATURES S...
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
KDS160E
SILICON EPITAXIAL PLANAR DIODE
FEATURES Small Package : ESC. Low Forward
Voltage. Fast Reverse Recovery Time. Small Total capacitance. Suffix U : Qualified to AEC-Q101. ex) KDS160E-RTK/HU
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse
Voltage Reverse
Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS)
VRM VR IFM IO IFSM
85 80 300 100 2
Power Dissipation
PD* 150
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
* : Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm.
UNIT V V mA mA A mW
CATHODE MARK B A
GG
C 1
2 D
1. ANODE 2. CATHODE
E
F
DIM A B C D E F G
MILLIMETERS 1.60 +_0.10
1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 0.20+_ 0.10
ESC
Marking
Type Name
UF
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Forward
Voltage
Reverse Current Total Capacitance
VF(1) VF(2) VF(3)
IR CT
IF=1mA IF=10mA IF=100mA VR=80V VR=0V, f=1MHz
Reverse Recovery Time
trr IF=10mA
MIN. -
TYP. 0.60 0.72 0.90
0.9 1.6
MAX. -
1.20 0.5 3.0 4.0
UNIT
V
A pF nS
2018. 04. 10
Revision No : 6
1/2
FORWARD CURRENT I F (mA)
KDS160E
10 3
10 2 10
1 10 -1 10 -2
0
IF - VF
C C
TaTa=-=2255
Ta=100 C
0.2 0.4 0.6 0.8 1.0 FORWARD
VOLTAGE VF (V)
1.2
REVERSE CURRENT IR (μA)
I R - VR
10
1 Ta=100 C Ta=75 C
10-1 Ta=50 C
10-2 Ta=25 C
10-3 0
20 40 60 80 REVERSE VO...