KDS6930B

SMD Type Dual N-Channel MOSFET FDS6930B (KDS6930B) MOSFET ■ Features ● VDS (V) = 30V ● ID = 5.5 A (VGS = 10V) ● RDS(ON) ＜ 38mΩ (VGS = 10V) ● RDS(ON) ＜ 50mΩ (VGS = 4.5V) ● Fast switching speed ● High power and current handling capability SOP-8 Unit:mm +0.040.21 -0.02 1.50 0.15 1 S2 2 G2 3 S1 4 G1 5 D1 6 D1 7 D2 8 D2 54 63 72 81 ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current (Note.1) Symbol VDS VGS ID IDM Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range (Note.1) (Note.2) (Note.3) (Note.1) PD RthJA RthJC TJ Tstg Note.1: 78°C/W when mounted on a 0.5 in2 pad of 2 oz copper Note.2: 125°C/W when mounted on a 0.02 in2 pad of 2 oz copper Note.3: 135°C/W when mounted on a minimum pad. Rating 30 ±20 5.5 20 2 1.6 1 0.9 78 40 150 -55 to 150 Unit V A W ℃/W ℃ www.kexin.com.cn 1 SMD Type MOSFET Dual N-Channel MOSFET FDS6930B (KDS6930B) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance On State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Di...