KF16N25D

SEMICONDUCTOR TECHNICAL DATA KF16N25D N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters and switching mode power supplies. FEATURES VDSS= 250V, ID= 13A Drain-Source ON Resistance : RDS(ON)=0.24 Qg(typ) = 21nC @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 250 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ID IDP EAS EAR dv/dt PD 13 8.1 39* 200 4.7 4.5 85 0.68 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Tj Tstg 150 -55 150 Thermal Resistance, Junction-to-Case RthJC 1.47 Thermal Resistance, Junction-toAmbient RthJA 110 * : Drain Current limited by maximum junction temperature. UNIT V V A mJ mJ V/ns W W/ /W /W A CD B H G FF J E 123 O K L N M DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_ 0.20 E 2.70 +_ 0.15 F 2.30 +_ 0.10 G 0.96 MAX H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10 N 0.70 MIN O 0.1 MAX 1. GATE 2. DRAIN 3. SOURCE DPAK (1) PIN CONNECTION D G S 2014. 12. 01 Revision No : 2 1/6 KF16N25D ELECTRICAL CHARACTERISTICS (Ta=2...