SEMICONDUCTOR
TECHNICAL DATA
KF3N50DZ/DS
N CHANNEL MOS FIELD EFFECT TRANSISTOR
General Description
This planar stripe...
SEMICONDUCTOR
TECHNICAL DATA
KF3N50DZ/DS
N CHANNEL MOS FIELD EFFECT TRANSISTOR
General Description
This planar stripe
MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.
FEATURES
VDSS= 500V, ID= 2.5A Drain-Source ON Resistance : RDS(ON)=2.5 Qg(typ) = 7.50nC
(Max) @VGS = 10V
trr(typ) = 120ns (KF3N50DS) trr(typ) = 300ns (KF3N50DZ)
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source
Voltage
VDSS
Gate-Source
Voltage
VGSS
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3)
ID IDP EAS EAR dv/dt
Drain Power Dissipation
Tc=25 Derate above 25
PD
Maximum Junction Temperature Storage Temperature Range Thermal Characteristics
Tj Tstg
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-toAmbient
RthJC RthJA
RATING 500 30 2.5 1.5 7 110
4
10 40 0.32 150 -55 150
3.1 110
UNIT V V
A
mJ mJ V/ns W W/
/W /W
A CD
B
H G
FF
J E
K L
N M
DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_0.20 E 2.70 +_ 0.15 F 2.30 +_0.10 G 0.96 MAX
H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10
N 0.70 MIN
O 0.1 MAX
123
O
1. GATE 2. DRAIN 3. SOURCE
DPAK (1)
PIN CONNECTION (KF3N50DZ/DS)
D
G S
2010. 11. 29
Revision No : 0
1/6
KF...
