SEMICONDUCTOR
TECHNICAL DATA
KF3N60D/I
N CHANNEL MOS FIELD EFFECT TRANSISTOR
General Description
This planar stripe M...
SEMICONDUCTOR
TECHNICAL DATA
KF3N60D/I
N CHANNEL MOS FIELD EFFECT TRANSISTOR
General Description
This planar stripe
MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.
FEATURES VDSS= 600V, ID= 2.3A Drain-Source ON Resistance : RDS(ON)=3.3 Qg(typ) = 8.5nC
@VGS = 10V
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
KF3N60D
A CD
B
H G
FF
J E
K L
N M
DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_0.20 E 2.70 +_ 0.15 F 2.30 +_0.10
G 0.96 MAX
H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10
N 0.70 MIN
123
1. GATE 2. DRAIN 3. SOURCE
Drain-Source
Voltage
VDSS
600
Gate-Source
Voltage
VGSS
30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3)
ID
IDP EAS EAR dv/dt
2.3 1.46 7* 120
3.2
4.5
Drain Power Dissipation
Tc=25 Derate above 25
PD
73 0.58
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
Thermal Resistance, Junction-toAmbient
RthJA
* : Drain current limited by maximum junction temperature.
2.8 62.5
V V
A
mJ mJ V/ns W W/
/W /W
A C
M N
G FF
123
K
E
BD
DPAK (1)
KF3N60I
H J
P
L
DIM MILLIMETERS A 6.6+_0.2 B 6.1+_0.2 C 5.34 +_0.3...