SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast sw...
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe
MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.
FEATURES VDSS= 500V, ID= 4.3A Drain-Source ON Resistance : RDS(ON)=1.4 Qg(typ) = 12nC
(Max) @VGS = 10V
KF5N50DZ/IZ
N CHANNEL MOS FIELD EFFECT TRANSISTOR
KF5N50DZ
A CD
B
H G
FF
J E
K L
N M
DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_0.20 E 2.70 +_ 0.15 F 2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10
N 0.70 MIN
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source
Voltage Gate-Source
Voltage
VDSS VGSS
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3)
ID
IDP EAS EAR dv/dt
Drain Power Dissipation
Tc=25 Derate above 25
PD
Maximum Junction Temperature Storage Temperature Range
Tj Tstg
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-toAmbient
RthJC RthJA
PIN CONNECTION (KF5N50DZ/IZ)
D
RATING 500 30 4.3 2.7 13 270
8.6
20 59.5 0.48 150 -55 150
2.1 110
UNIT V V
A
mJ mJ V/ns W W/
/W /W
123
1. GATE 2. DRAIN 3. SOURCE
DPAK (1)
KF5N50IZ
AH CJ
BD
M N
G FF
123
K
E
P
L
1. GATE 2. DRAIN 3. SOURCE
DIM MILLIMETERS A 6.6+_0.2 B...
