KHB2D0N60F

www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KHB2D0N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. A O C F E G B Q I FEATURES VDSS= 600V, ID= 2.0A Drain-Source ON Resistance : RDS(ON)=5.0 @VGS = 10V Qg(typ.) = 12.5nC K M L J D N N P H 1 2 3 DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 13.08 + J K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.2 + Q 1. GATE 2. DRAIN 3. SOURCE MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 ) TO-220AB RATING SYMBOL KHB2D0N60P KHB2D0N60F VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 54 0.43 150 -55 150 2.0 1.3 6.0 120 5.4 5.5 23 0.18 600 30 2.0* 1.3* 6.0* mJ K UNIT V A C F O E G P V A B mJ V/ns W W/ L J D M M H Q DIM MILLIMETERS _ 0.2 10.16 + A _ 0.2 15.87 + B _ 0.2 C 2.54 + _ 0.1 D 0.8 + _ 0.1 E 3.18 + _ 0.1 F 3.3 + _ 0.2 12.57 + G _ 0.1 0.5 + H J 13.0 MAX _ 0.1 K 3.23 + L 1.47 MAX _ 0.2 2.54 + M _ 0.2 N 4.7 + _ 0.2 O 6.68...