ASSEMBLIES. KHP25 Datasheet

KHP25 Datasheet PDF

Part KHP25
Description KILOVOLT HIGH CURRENT RECTIFIER ASSEMBLIES
Feature KILOVOLT HIGH CURRENT RECTIFIER ASSEMBLIES KHP RHP MATCHED SILICON RECTIFIER ELEMENTS RATED CURRE.
Manufacture EDI
Datasheet
Download KHP25 Datasheet

KILOVOLT HIGH CURRENT RECTIFIER ASSEMBLIES KHP RHP MATCHE KHP25 Datasheet




KHP25
KILOVOLT HIGH CURRENT
RECTIFIER ASSEMBLIES
KHP
RHP
MATCHED SILICON RECTIFIER ELEMENTS
RATED CURRENT TO 3.0 AMPERES
PRV 5,000 TO 50,000 VOLTS
FAST RECOVERY (RHP SERIES)
ALL APPLICABLE MIL-STD-750 TESTS
HIGH THERMAL CONDUCTIVITY ENCAPSULATION
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EDI Type No.
KHP5
KHP6
KHP7
KHP8
KHP9
KHP10
KHP15
KHP20
KHP25
KHP30
KHP35
KHP40
KHP50
RHP5
RHP6
RHP7
RHP8
RHP9
RHP10
RHP15
RHP20
RHP25
RHP30
RHP35
RHP40
RHP50
Peak
Avg. Fwd.Current Max. Fwd Voltage
ReverseVoltage
IO at 25 oC
Drop at 25 oC and
PRV (Volts)
(Am ps)
3 Amps VF (Volts)
Dim ens ion
L
Inches
Fig .3
STANDARD RECOVERY
5,000
6,000
7,000
8,000
9,000
10,000
15,000
20,000
25,000
30,000
35,000
40,000
50,000
5,000
6,000
7,000
8,000
9,000
10,000
15,000
20,000
25,000
30,000
35,000
40,000
50,000
3.00
8 4.00
2.75
2.75
9 4.75
10 5.50
2.75
2.50
11 6.00
14 6.50
2.50
2.50
2.25
2.25
2.25
15 7.00
21 4.00
28 6.00
36 8.00
42 4.00
2.25
2.25
49 6.00
63 8.00
2.25
70 6.00
200 NANOSECOND RECOVERY (FIG.4)
2.50
10 4.00
2.50
2.50
11 4.75
12 5.50
2.50
2.50
13 6.00
16 6.50
2.50
2.25
17 7.00
25 4.00
2.25
2.25
2.25
33 6.00
42 8.00
50 4.00
2.25
2.25
58 6.00
65 8.00
2.25
82 6.00
Dim ens ion
W
Inches
Fig .3
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
3.0
3.0
3.0
4.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
3.0
3.0
3.0
4.0
Case
Sty le
Fig .3
A
A
A
A
A
A
B
B
B
B
B
B
B
A
A
A
A
A
A
B
B
B
B
B
B
B
ELECTRICAL CHARACTERISTICS
(at TA=25 C Unless Otherwise Specified)
Max. DC Reverse Current @ PRV and 25 oC, IR
Max. DC Reverse Current @ PRV and 100 oC, IR
Ambient Operating Temperature Range,TA
Storage Temperature Range, TSTG
Max.One-Half Cycle Surge Current, I FM
(Surge )@ 60Hz
Forward Current Repetitive Peak,IFRM
KHP SERIES
STANDARD
RECOVERY
5A
100 A
-55 oC to +150oC
-55 oC to +150oC
400 Amps
40 Amps
ELECTRICAL CHARACTERISTICS
(at TA=25 C Unless Otherwise Specified)
Max. DC Reverse Current @ PRV and 25 oC, IR
Max. DC Reverse Current @ PRV and 100 oC, IR
Max. Reverse Recovery Time , Trr (Fig.4)
Ambient Operating Temperature Range,TA
Storage Temperature Range, TSTG
Max.One-HalfCycle Surge Current, IFM
(Surge )@ 60Hz
Forward Current Repetitive Peak,IFRM
RHP SERIES
FAST
RECOVERY
5A
250 A
200 nanosec
-55 oC to +150oC
-55 oC to +150oC
240 Amps
25 Amps
EDI reserves the right to change these specifications at any time without notice.



KHP25
KHP RHP
FIG.1
OUTPUT CURRENT vs AMBIENT TEMPERATURE
100
75
50
25
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0
0
25 50
75 100 125
AMBIENT TEMPERATURE (OC)
150
FIG.2
NON-REPETITIVE SURGE CURRENT
400
300
240 KHP
200
150
100
RHP
70
50
30
20
CASE STYLE A
OUTLINE
L
1
FIG.3
PACKAGE STYLE
2 3 4 6 8 10
20 30 40 60 80 100
NUMBER OF CYCLES(60 Hz)
3
8
MAX.
CASE STYLE B
OUTLINE
L
8-32 THREAD X 1/4 DEEP
(2) MTG. INSERTS
W
11
44
6-32 THREAD X 1/4 DEEP
(2) MTG. INSERTS
1
W
1
4
8-32 THREAD X 1/4 DEEP
(4) MTG. INSERTS
1
1
4
1
4
It is recommended that a proper heat sink be used on the terminals of this device between the body and the soldering point to
prevent damage form excess heat.
TEST CIRCUIT
FIG.4
TYPICAL REVERSE RECOVERY WAVEFORM
T RR
0.5A
ZERO
REFERENCE
R1
50 OHM
D.U.T.
- R2 SCOPE
1 OHM
PULSE
GENERATOR
1.0A R1,R2 NON-INDUCTIVE RESISTORS
0.25A PULSE GENERATOR - HEWLETT PACKARD 214A OR EQUIV.
IKC REP.RATE, 10 SEC. PULSE WIDTH
ADJUST PULSE AMPLITUDE FOR PEAK IR
Prior to the manufacture of these assemblies, the individual silicon junction is measured for
maximum recovery time in the test circuit shown.
ELECTRONIC DEVICES, INC. DESIGNERS AND MANUFACTURERS OF SOLID STATE DEVICES SINCE 1951.
21 GRAY OAKS AVENUE * YONKERS. NEW YORK 10710 914-965-4400 * FAX 914-965-5531 * 1-800-678-0828
Ee-mail:sales@edidiodes.comW* website:http:// www.edidiodes.com




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