SMD Type
N-Channel MOSFET SI4490DY-HF (KI4490DY-HF)
MOSFET
■ Features
● VDS (V) = 200V
● ID = 4A (VGS = 10V)
● RDS...
SMD Type
N-Channel
MOSFET SI4490DY-HF (KI4490DY-HF)
MOSFET
■ Features
● VDS (V) = 200V
● ID = 4A (VGS = 10V)
● RDS(ON) < 80mΩ (VGS = 10V)
● RDS(ON) < 90mΩ (VGS = 6V) ● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
D
+0.040.21 -0.02
SOP-8
1.50 0.15
1 Source 2 Source 3 Source 4 Gate
5 Drain 6 Drain 7 Drain 8 Drain
G
S
■ Absolute Maximum Ratings Ta = 25℃
Parameter Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Current (TJ=150℃) *1
Pulsed Drain Current Avalanch Current
Power Dissipation
*1
Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Foot Junction Temperature Storage Temperature Range
TA=25℃ TA=70℃
L=0.1mH TA=25℃ TA=70℃ *1
*1: Surface Mounted on 1" x 1" FR4 board.
Symbol VDS VGS
ID
IDM IAS
PD
RthJA RthJF
TJ Tstg
10S Steady State 200 ±20
4 2.85 3.2 2.3
40 15 3.1 1.56 21 40 80
21 150 -55 to 150
Unit V A
W ℃/W
℃
■ Marking
Marking
4490 KC**** F
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SMD Type
N-Channel
MOSFET SI4490DY-HF (KI4490DY-HF)
MOSFET
■ Electrical Characteristics Ta = 25℃
Parameter Drain-Source Breakdown
Voltage
Zero Gate
Voltage Drain Current
Gate-Body Leakage Current Gate Threshold
Voltage
Static Drain-Source On-Resistance *1
On State Drain Current Forward Transconductance *1 Gate Resistance *2 Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Maximum Body-Diode Continuous Current Di...