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SMD Type
Transistors IC
Complementary (N- and P-Channel) MOSFET Half-Bridge KI4501ADY
Features
TrenchFET Power MOSFET
Absolute Maximum Ratings TA = 25
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )* TA = 25 TA = 70 Pulsed Drain Current Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* TA = 25 TA = 70 Operating Junction and Storage Temperature Range *Surface Mounted on FR4 Board;t 10 sec. TJ, Tstg IDM IS PD 1.
MOSFET
www.DataSheet4U.com
SMD Type
Transistors IC
Complementary (N- and P-Channel) MOSFET Half-Bridge KI4501ADY
Features
TrenchFET Power MOSFET
Absolute Maximum Ratings TA = 25
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )* TA = 25 TA = 70 Pulsed Drain Current Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* TA = 25 TA = 70 Operating Junction and Storage Temperature Range *Surface Mounted on FR4 Board;t 10 sec. TJ, Tstg IDM IS PD 1.8 2.5 1.6 Symbol VDS VGS ID 8.8 7 30 1 1.3 0.84 -1.8 2.5 1.6 -55 to 150 N-Channel 10 sec Steady State 30 20 6.3 5.2 -5.7 -4.5 -30 1 1.3 0.84 P-Channel 10 sec Steady State -8 8 -4.1 -3.3 V V A A A A W W Unit
Thermal Resistance Ratings TA = 25
Parameter t 10 sec Symbol N-Channel Typ Maximum Junction-to-Ambient* Maximum Junction-to-Foot *Surface Mounted on FR4 Board. RthJA RthJc 40 75 18 Max 50 95 23 P-Channel Typ 42 76 21 Max 50 95 26 /W Unit
Steady State Steady State
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www.DataSheet4U.com
SMD Type
KI4501ADY
Electrical Characteristics Ta = 25
Parameter Gate Threshold Voltage Gate Body Leakage Symbol VGS( th) IGSS Testconditons VDS = VGS, ID = 250 A VDS = VGS, ID = -250 VDS = 0 V VGS = 20 V VDS = 0 V VGS = 8 V VDS = 30V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -8V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 VDS = -8V, VGS = 0 V, TJ = 55 On State Drain Currenta ID(on) VDS =5 V, VGS = 10 V VDS =-5 V, VGS = -4.5 V VGS = 10 V, ID = 8.8A Drain Source On State.