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SMD Type
N- and P-Channel 2.5-V (G-S) MOSFET KI4562DY
IC IC
PIN Configuration
Absolute Maximum Ratings TA = 25
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )* TA = 25 TA = 70 Pulsed Drain Current Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* TA = 25 TA = 70 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient * *Surface Mounted on FR4 Board, t 10 sec. TJ, Tstg RthJA IDM IS PD Symbo.
MOSFET
www.DataSheet4U.com
SMD Type
N- and P-Channel 2.5-V (G-S) MOSFET KI4562DY
IC IC
PIN Configuration
Absolute Maximum Ratings TA = 25
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )* TA = 25 TA = 70 Pulsed Drain Current Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* TA = 25 TA = 70 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient * *Surface Mounted on FR4 Board, t 10 sec. TJ, Tstg RthJA IDM IS PD Symbol VDS VGS ID N-Channel 20 12 7.1 5.7 40 1.7 2 1.3 -55 to 150 62.5 /W P-Channel -20 12 6.2 4.9 40 -1.7 Unit V V A A A A W W
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1
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SMD Type
KI4562DY
Electrical Characteristics TJ = 25
Parameter Gate Threshold Voltage Gate Body Leakage Symbol VGS( th) IGSS Testconditons VDS = VGS, ID = 250 A VDS = VGS, ID = -250 VDS = 0 V VGS = 12 V VDS = 0 V VGS = 12 V VDS = 20V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -20V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55 VDS = -20V, VGS = 0 V, TJ = 55 On State Drain Currenta ID(on) VDS VDS 5 V, VGS = 4.5 V -5 V, VGS = -4.5 V A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel VDS = -10 V, VGS = -4.52 V, ID = -6.2A N Channel VDD = 10 V, RL = 10 ID= 1A, VGEN = 4.5V, Rg = 6 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch P-Channel VDD = -10 V, RL = 10 Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width tf trr ID= -1 A, VGEN = -4.5 V, Rg = 6 IF .