KI8205A

SSMMDD TTyyppee MOSFET Dual N-Channel Enhancement MOSFET KI8205A Features 6.5 A, 20 V. rDS(on) = 0.025 rDS(on) = 0.029 @ VGS = 4.5 V @ VGS = 2.5 V. TSSOP-8 6.45 +0.1 -0.1 4.45 +0.1 -0.1 Unit: mm +0.030.15 -0.03 Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation TA = 25 TA = 70 Thermal Resistance,Junction-to-Ambient Thermal Resistance,Junction-to-Case Jumction temperature and Storage temperature Symbol VDS VGS ID IDM PD R JA R JC Tj.Tstg Rating 20 10 6.5 20 2.0 1.6 78 40 -55 to +150 Unit V V A A W W /W /W www.kexin.com.cn 1 SSMMDD TTyyppee KI8205A MOSFET Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage Drain-Source On-State Resistance * On-State Drain Current * Forward Transconductance * Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage * * Pulse test; pulse width 300 s, duty cycle Symbol Testconditons VDSS VGS = 0 V, ID = 250 A IDSS VDS = 20V , VGS = 0V VDS = 20V , VGS = 0V , TJ =55 IGSS VDS = 0V , VGS = 8V VGS(th) VDS = VGS , ID = 250uA VGS = 4.5V , ID = 6.5A rDS(on) VGS = 2.5V , ID = 5.4A ID(on) VDS = 5V , VGS = 4.5V gfs VDS = 5V , ID =3A C...