KIA13N50H

KIA SEMICONDUCTORS 13Amps，500V N-CHANNEL MOSFET 13N50H 1.Description The KIA13N50H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as high efficiency switched mode power supplies, active power factor correction,electronic lamp ballasts based on half bridge topology 2. Features „ RDS(on)=0.48Ω @ VGS=10V „ Low gate charge ( typical 43nC) „ Fast switching capability „ Avalanche energy specified „ Improved dv/dt capability 3. Pin configuration Pin 1 2 3 4 1 of 5 Function Gate Drain Source Drain KIA SEMICONDUCTORS 13Amps，500V N-CHANNEL MOSFET 13N50H 4. Absolute maximum ratings Parameter Symbol Drain-source voltage Gate-source voltage Drain current continuous Drain current pulsed (note1) TC=25ºC TC=100ºC Avalanche energy Repetitive (note1) Single pulse (note2) Peak diode recovery dv/dt (note 3) VDSS VGSS ID IDP EAR EAS dv/dt Total power dissipation TC=25ºC derate above 25ºC PD Junction temperature TJ Storage temperature TSTG Drain current limited by maximum junction temperature. (TC= 25 ºC , unless otherwise notes) Ratings Units 500 V +30 V 13.0 A 8.0 A 52.0 A 19.5 mJ 860 mJ 4.5 V/ns 195 W 1.65 W/ºC +150 ºC -55~+150 ºC 5. Thermal characteristics Parameter Thermal resistance,junction-ambient Thermal resistance,case-to-sink typ. Thermal resistance,Junction-case Symbol RthJA RthCS RthJC Ratings 62.5 0.5 0.64 Units ºC/W 2 of 5 KIA SEMICONDUCTORS 13Amps，500...