KM641003B

www.DataSheet4U.com PRELIMINARY KM641003B Document Title 256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Preliminary PRELIMINARY CMOS SRAM Revision History Rev No. Rev. 0.0 Rev.1.0 History Initial release with Design Target. Release to Preliminary Data Sheet. 1. Replace Design Target to Preliminary. Release to Final Data Sheet. 2.1. Delete Preliminary 2.2. Delete L-version. 2.3. Delete Data Retention Characteristics and Waveform. 2.4. Delete Industrial Temperature Range Part 2.5. Delete TSOP2 Package 2.6. Add Capacitive load of the test environment in A.C test load 2.7. Change D.C characteristics Previous spec. Changed spec. Items (8/10/12ns part) (8/10/12ns part) Icc 150/140/130mA 150/145/140mA Isb 30mA 50mA Draft Data Apr. 1st, 1997 Jun. 1st, 1997 Remark Design Target Preliminary Rev.2.0 Feb. 25th, 1998 Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquart ers. -1- Rev 2.0 February 1998 www.DataSheet4U.com PRELIMINARY KM641003B 256K x 4 Bit (with OE)High-Speed CMOS Static RAM FEATURES Fast Access Time 8,10,12ns(Max.) Low Power Dissipation Standby (TTL) : 50 mA(Max.) (CMOS) : 10 mA(Max.) Operating KM641003...