CMOS SRAM. KM641003B Datasheet

KM641003B Datasheet PDF


Part Number

KM641003B

Description

CMOS SRAM

Manufacture

Samsung Semiconductor

Total Page 8 Pages
Datasheet
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KM641003B
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KM641003B
PRELIMINARY
PRPEreLlIiMmIiNnAarRyY
CMOS SRAM
Document Title
256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out.
Revision History
RevNo.
History
Rev. 0.0
Initial release with Design Target.
Rev.1.0
Release to Preliminary Data Sheet.
1. Replace Design Target to Preliminary.
Rev.2.0
Release to Final Data Sheet.
2.1. Delete Preliminary
2.2. Delete L-version.
2.3. Delete Data Retention Characteristics and Waveform.
2.4. Delete Industrial Temperature Range Part
2.5. Delete TSOP2 Package
2.6. Add Capacitive load of the test environment in A.C test load
2.7. Change D.C characteristics
Items
Previous spec.
(8/10/12ns part)
Changed spec.
(8/10/12ns part)
Icc
150/140/130mA
150/145/140mA
Isb
30mA
50mA
Draft Data
Apr. 1st, 1997
Jun. 1st, 1997
Remark
Design Target
Preliminary
Feb. 25th, 1998 Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters
of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquart ers.
-1-
Rev 2.0
February 1998

KM641003B
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KM641003B
PRELIMINARY
PRPEreLlIiMmIiNnAarRyY
CMOS SRAM
256K x 4 Bit (with OE)High-Speed CMOS Static RAM
FEATURES
• Fast Access Time 8,10,12ns(Max.)
• Low Power Dissipation
Standby (TTL) : 50 mA(Max.)
(CMOS) : 10 mA(Max.)
Operating KM641003B - 8 : 150 mA(Max.)
KM641003B - 10 : 145 mA(Max.)
KM641003B - 12 : 140 mA(Max.)
• Single 5.0V±10% Power Supply
• TTL Compatible Inputs and Outputs
• I/O Compatible with 3.3V Device
• Fully Static Operation
- No Clock or Refresh required
• Three State Outputs
• Center Power/Ground Pin Configuration
• Standard Pin Configuration
KM641003BJ : 32-SOJ-400
GENERAL DESCRIPTION
The KM641003B is a 1,048,576-bit high-speed Static Random
Access Memory organized as 262,144 words by 4 bits. The
KM641003B uses 4 common input and output lines and has an
output enable pin which operates faster than address access
time at read cycle. The device is fabricated using SAMSUNG s
advanced CMOS process and designed for high-speed circuit
technology. It is particularly well suited for use in high-density
high-speed system applications. The KM641003B is packaged
in a 400 mil 32-pin plastic SOJ.
PIN CONFIGURATION (Top View)
FUNCTIONAL BLOCK DIAGRAM
Clk Gen.
Pre-Charge Circuit
A0
A1
A2
A3 Memory Array
A4
256 Rows
1024x4 Columns
A5
A6
A7
I/O1 ~ I/O4
Data
Cont.
I/O Circuit &
Column Select
CLK
Gen.
A8 A9 A10 A11 A12 A13 A14 A15 A16A17
CS
WE
OE
N.C. 1
A0 2
A1 3
A2 4
A3 5
CS 6
I/O1 7
Vcc 8
Vss 9
I/O2 10
WE 11
A4 12
A5 13
A6 14
A7 15
N.C. 16
SOJ
32 A17
31 A16
30 A15
29 A14
28 A13
27 OE
26 I/O4
25 Vss
24 Vcc
23 I/O3
22 A12
21 A11
20 A10
19 A9
18 A8
17 N.C.
PIN FUNCTION
Pin Name
A0 - A17
WE
CS
OE
I/O1 ~ I/O4
VCC
VSS
N.C
Pin Function
Address Inputs
Write Enable
Chip Select
Output Enable
Data Inputs/Outputs
Power(+5.0V)
Ground
No Connection
-2-
Rev 2.0
February 1998




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