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KMA3D6N20SA MOSFET Datasheet PDFN-Channel MOSFET N-Channel MOSFET |
| Part Number | KMA3D6N20SA |
|---|---|
| Description | N-Channel MOSFET |
| Feature | SEMICONDUCTOR
TECHNICAL DATA
General Des cription
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate char ge and excellent avalanche characterist ics. It is mainly suitable for portable equipment. FEATURES VDSS=20V, ID=3. 6A Drain-Source ON Resistance RDS(ON)=45m (Max. ) @ VGS=4. 5V RDS(ON)=65m (Max. ) @ VGS=2. 5V Super Hige Dense Cell Design KMA3D6N20SA N-Ch Trench MOSFET E L BL DIM MILLIMETERS A 2. 93+_ 0. 20 B 1. 30+ 0. 20/-0. 15 A G H D 23 C 1. 30 MAX D 0 . 40+0. 15/-0. 05 E 2. 40+0. 30/-0. 20 1 G 1 . 90 H 0. 95 J 0. 13+0. 10/-0. 05 K 0. 00 ~ 0. 10 Q PP . |
| Manufacture | KEC |
| Datasheet |
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| Part Number | KMA3D6N20SA |
|---|---|
| Description | N-Channel MOSFET |
| Feature | SEMICONDUCTOR
TECHNICAL DATA
General Des cription
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate char ge and excellent avalanche characterist ics. It is mainly suitable for portable equipment. FEATURES VDSS=20V, ID=3. 6A Drain-Source ON Resistance RDS(ON)=45m (Max. ) @ VGS=4. 5V RDS(ON)=65m (Max. ) @ VGS=2. 5V Super Hige Dense Cell Design KMA3D6N20SA N-Ch Trench MOSFET E L BL DIM MILLIMETERS A 2. 93+_ 0. 20 B 1. 30+ 0. 20/-0. 15 A G H D 23 C 1. 30 MAX D 0 . 40+0. 15/-0. 05 E 2. 40+0. 30/-0. 20 1 G 1 . 90 H 0. 95 J 0. 13+0. 10/-0. 05 K 0. 00 ~ 0. 10 Q PP . |
| Manufacture | KEC |
| Datasheet |
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