KMB7D0DN40QB

SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for power management in PC, portable equipment and battery powered systems. FEATURES VDSS=40V, ID=7A. Drain to Source on Resistance. RDS(ON)=25m (Max.) @VGS=10V RDS(ON)=45m (Max.) @VGS=4.5V Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL PATING UNIT Drain to Source Voltage Gate to Source Voltage Drain Current Ta=25 (Note1) Pulsed VDSS VGSS ID IDP 40 V 20 V 7A 36 A Drain to Source Diode Forward Current IS 7 A Ta=25 (Note1) Drain Power Dissipation Ta=100 (Note1) Maximum Junction Temperature Storage Temperature Range 2W PD 1.44 W Tj -55~150 Tstg -55~150 Thermal Resistance, Junction to Ambient(Note1) RthJA 62.5 /W Note1) Surface Mounted on 1 1 FR4 Board., t 10sec KMB7D0DN40QB Dual N-Ch Trench MOSFET DP H T G U L A DIM MILLIMETERS A 4.85+_ 0.2 85 B1 3.94+_ 0.2 B2 6.02+_ 0.3 B1 B2 D 0.4+_ 0.1 G 0.15+0.1/-0.05 14 H 1.63+_ 0.2 L 0.65+_ 0.2 P 1.27 T 0.20+0.1/-0.05 U 0.1 MAX FLP-8 KMB7D0DN 40QB PIN CONNECTION (TOP VIEW) S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 1 2 3 4 8 7 6 5 2012. 1. 13 Revision No : 0 1/5 KMB7D0DN40QB ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED CHARACTERISTIC Static SYMBOL TEST CONDITION Drain to Source Breakdown Voltage Drain Cut-off Current Gate to Source Leakage Cu...