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KMD7D5P40QA MOSFET Datasheet PDFP-Channel MOSFET P-Channel MOSFET |
| Part Number | KMD7D5P40QA |
|---|---|
| Description | P-Channel MOSFET |
| Feature | SEMICONDUCTOR
TECHNICAL DATA
GENERAL DES CRIPTION
This Trench MOSFET has better characteristics, such as low on resista nce, low gate charge and excellent aval anche characteristiscs. It is mainly su itable for battery protection circuit. FEATURES VDSS=-40V, ID=-7. 5A. Drain-So urce ON Resistance. RDS(ON)=30m (Max. ) @ VGS=-10V RDS(ON)=37m (Max. ) @ VGS=-4. 5V Super High Dense Cell Design MOSFET Maximum Ratings (Ta=25 Unless otherwis e noted) CHARACTERISTIC SYMBOL PATING UNIT Drain Source Voltage Gate Sourc e Voltage Drain Current DC@Ta=25 Puls ed Drain Source Diode Forward Current Drain Power D . |
| Manufacture | KEC |
| Datasheet |
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| Part Number | KMD7D5P40QA |
|---|---|
| Description | P-Channel MOSFET |
| Feature | SEMICONDUCTOR
TECHNICAL DATA
GENERAL DES CRIPTION
This Trench MOSFET has better characteristics, such as low on resista nce, low gate charge and excellent aval anche characteristiscs. It is mainly su itable for battery protection circuit. FEATURES VDSS=-40V, ID=-7. 5A. Drain-So urce ON Resistance. RDS(ON)=30m (Max. ) @ VGS=-10V RDS(ON)=37m (Max. ) @ VGS=-4. 5V Super High Dense Cell Design MOSFET Maximum Ratings (Ta=25 Unless otherwis e noted) CHARACTERISTIC SYMBOL PATING UNIT Drain Source Voltage Gate Sourc e Voltage Drain Current DC@Ta=25 Puls ed Drain Source Diode Forward Current Drain Power D . |
| Manufacture | KEC |
| Datasheet |
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