KMM53232004CK

DRAM MODULE KMM53232004CK/CKG 4Byte 32Mx32 SIMM (16Mx4 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) The 4th. generation of 64Mb DRAM components are applied for this module. KMM53232004CK/CKG DRAM MODULE KMM53232004CK/CKG EDO Mode 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM53232004C is a 32Mx32bits Dynamic RAM high density memory module. The Samsung KMM53232004C consists of sixteen CMOS 16Mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM53232004C is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets. KMM53232004CK/CKG FEATURES Part Identification - KMM53232004CK(4K cycles/64ms Ref, SOJ, Solder) - KMM53232004CKG(4K cycles/64ms Ref, SOJ, Gold) Extended Data Out Mode Operation CAS-before-RAS & Hidden Refresh capability RAS-only refresh capability TTL compatible inputs and outputs Single +5V ±10% power supply JEDEC standard PDpin & pinout PCB : Height(1420mil), double sided component PERFORMANCE RANGE Speed -5 -6 tRAC 50ns 60ns tCAC 13ns 15ns tRC 84ns 104ns tHPC 20ns 25ns PIN CONFIGURATIONS Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Symbol VSS DQ0 DQ18 DQ1 DQ19 DQ2 DQ20 DQ3 DQ21 Vcc NC A0 A1 A2 A3 A4 A5 A6 A10 DQ4 DQ22 DQ5 DQ23 DQ...