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KMM5324100CK

Samsung Semiconductor

(KMM5324100CK / KMM5324000CK) 4MBx32 DRAM Simm Using 4MBx4

DRAM MODULE KMM5324000CK/CKG KMM5324100CK/CKG KMM5324000CK/CKG & KMM5324100CK/CKG with Fast Page Mode 4M x 32 DRAM SIM...


Samsung Semiconductor

KMM5324100CK

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Description
DRAM MODULE KMM5324000CK/CKG KMM5324100CK/CKG KMM5324000CK/CKG & KMM5324100CK/CKG with Fast Page Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM53240(1)00CK is a 4Mx32bits Dynamic RAM high density memory module. The Samsung KMM53240(1)00CK consists of eight CMOS 4Mx4bits DRAMs in 24-pin SOJ package mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM53240(1)00CK is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets. FEATURES Part Identification - KMM5324000CK(4096 cycles/64ms Ref, SOJ, Solder) - KMM5324000CKG(4096 cycles/64ms Ref, SOJ, Gold) - KMM5324100CK(2048 cycles/32ms Ref, SOJ, Solder) - KMM5324100CKG(2048 cycles/32ms Ref, SOJ, Gold) Fast Page Mode Operation CAS-before-RAS refresh capability RAS-only and Hidden refresh capability TTL compatible inputs and outputs Single +5V±10% power supply JEDEC standard PDPin & pinout PCB : Height(1000mil), single sided component PERFORMANCE RANGE Speed -5 -6 tRAC 50ns 60ns tCAC 13ns 15ns tRC 90ns 130ns PIN CONFIGURATIONS Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Symbol VSS DQ0 DQ16 DQ1 DQ17 DQ2 DQ18 DQ3 DQ19 Vcc NC A0 A1 A2 A3 A4 A5 A6 A10 DQ4 DQ20 DQ5 DQ21 DQ6 DQ22 DQ7 DQ23 A7 A11 Vcc A8 A9 Res(RAS1) RAS0 NC NC Pin 37 38 39 40 41 42 43 44 45 46 47 48 49 50 ...




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