DRAM MODULE
KMM5328004BSW/BSWG EDO Mode 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
GENERAL DESCRIPTION
The Samsung KM...
DRAM MODULE
KMM5328004BSW/BSWG EDO Mode 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
GENERAL DESCRIPTION
The Samsung KMM5328004B is a 8Mx32bits Dynamic RAM high density memory module. The Samsung KMM5328004B consists of four
CMOS 4Mx16bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM5328004B is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.
KMM5328004BSW/BSWG
FEATURES
Part Identification - KMM5328004BSW(4K cycles/64ms Ref, TSOP, Solder) - KMM5328004BSWG(4K cycles/64ms Ref, TSOP, Gold) Extended Data Out Mode Operation CAS-before-RAS & Hidden Refresh capability RAS-only refresh capability TTL compatible inputs and outputs Single +5V±10% power supply JEDEC standard PDpin & pinout PCB : Height(1000mil), double sided component
PERFORMANCE RANGE
Speed -5 -6
tRAC
50ns 60ns
tCAC
13ns 15ns
tRC
84ns 104ns
tHPC
20ns 25ns
PIN CONFIGURATIONS
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Symbol VSS DQ0 DQ18 DQ1 DQ19 DQ2 DQ20 DQ3 DQ21 Vcc NC A0 A1 A2 A3 A4 A5 A6 A10 DQ4 DQ22 DQ5 DQ23 DQ6 DQ24 DQ7 DQ25 A7 A11 Vcc A8 A9 RAS3 RAS2 NC NC Pin 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 Symbol NC NC Vss CAS0 CAS2 CAS3 CAS1 RAS0 RAS1 NC W NC DQ9 DQ27 DQ10 DQ28 DQ11 ...