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KMM5328100CK

Samsung Semiconductor

(KMM5328100CK / KMM5328000CK) 8MBx32 DRAM Simm Using 4MBx4

DRAM MODULE KMM5328000CK/CKG KMM5328100CK/CKG KMM5328000CK/CKG & KMM5328100CK/CKG with Fast Page Mode 8M x 32 DRAM SIM...


Samsung Semiconductor

KMM5328100CK

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Description
DRAM MODULE KMM5328000CK/CKG KMM5328100CK/CKG KMM5328000CK/CKG & KMM5328100CK/CKG with Fast Page Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM53280(1)00CK is a 8Mx32bits Dynamic RAM high density memory module. The Samsung KMM53280(1)00CK consists of sixteen CMOS 4Mx4bits DRAMs in 24-pin SOJ package mounted on a 72-pin glassepoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM53280(1)00CK is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets. FEATURES Part Identification - KMM5328000CK(4096 cycles/64ms Ref, SOJ, Solder) - KMM5328000CKG(4096 cycles/64ms Ref, SOJ, Gold) - KMM5328100CK(2048 cycles/32ms Ref, SOJ, Solder) - KMM5328100CKG(2048 cycles/32ms Ref, SOJ, Gold) Fast Page Mode Operation CAS-before-RAS refresh capability RAS-only and Hidden refresh capability TTL compatible inputs and outputs Single +5V±10% power supply JEDEC standard PDPin & pinout PCB : Height(1000mil), double sided component PERFORMANCE RANGE Speed -5 -6 tRAC 50ns 60ns tCAC 13ns 15ns tRC 90ns 110ns PIN CONFIGURATIONS Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Symbol VSS DQ0 DQ16 DQ1 DQ17 DQ2 DQ18 DQ3 DQ19 Vcc NC A0 A1 A2 A3 A4 A5 A6 A10 DQ4 DQ20 DQ5 DQ21 DQ6 DQ22 DQ7 DQ23 A7 A11 Vcc A8 A9 RAS1 RAS0 NC NC Pin 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 5...




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