DRAM MODULE
KMM5361205C2W/C2WG
1Mx36 DRAM SIMM
(1MX16 Base)
Revision 0.0 November 1997
-1-
Rev. 0.0 (Nov. 1997)
DR...
DRAM MODULE
KMM5361205C2W/C2WG
1Mx36 DRAM SIMM
(1MX16 Base)
Revision 0.0 November 1997
-1-
Rev. 0.0 (Nov. 1997)
DRAM MODULE
Revision History
Version 0.0 (November 1997)
Changed module PCB from 6-Layer to 4-Layer.
KMM5361205C2W/C2WG
Changed Module Part No. from KMM5361205CW/CWG to KMM5361205C2W/C2WG caused by PCB revision .
-2-
Rev. 0.0 (Nov. 1997)
DRAM MODULE
KMM5361205C2W/C2WG
KMM5361205C2W/C2WG Fast Page Mode with Extended Data Out 1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh,
GENERAL DESCRIPTION
The Samsung KMM5361205C2W is a 1Mx36bits Dynamic RAM high density memory module. The Samsung KMM5361205C2W consists of two
CMOS 1Mx16bits DRAMs in 42-pin SOJ package and one
CMOS 1Mx4 bit Quad CAS with EDO DRAM in 24-pin SOJ package mounted on a 72-pin glassepoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM5361205C2W is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.
FEATURES
Part Identification - KMM5361205C2W(1024 cycles/16ms Ref, SOJ, Solder) - KMM5361205C2WG(1024 cycles/16ms Ref, SOJ, Gold) Fast Page Mode with Extended Data Out CAS-before-RAS refresh capability RAS-only and hidden refresh capability TTL compatible inputs and outputs Single +5V ±10% power supply JEDEC standard PDPin & pinout PCB : Height(750mil), single sided component
PERFORMANCE RANGE
Speed -5 -6
tRAC
50ns 60ns
tCAC
15ns 17...