DRAM MODULE
KMM53616000CK/CKG
4Byte 16Mx36 SIMM
(16Mx4 & 16Mx1 base)
Revision 0.0 June 1999
DRAM MODULE
Revision History
Version 0.0 (June 1999)
• The 4th. generation of 64Mb DRAM components are applied for this module.
KMM53616000CK/CKG
DRAM MODULE
KMM53616000CK/CKG
KMM53616000CK/CKG Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
GENERAL DESCRIPTION
The Samsung KMM53616000C is a 16Mx36bits Dynamic RAM high density memory module. The Samsung KMM53616000C consists o.
DRAM MODULE
DRAM MODULE
KMM53616000CK/CKG
4Byte 16Mx36 SIMM
(16Mx4 & 16Mx1 base)
Revision 0.0 June 1999
DRAM MODULE
Revision History
Version 0.0 (June 1999)
• The 4th. generation of 64Mb DRAM components are applied for this module.
KMM53616000CK/CKG
DRAM MODULE
KMM53616000CK/CKG
KMM53616000CK/CKG Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
GENERAL DESCRIPTION
The Samsung KMM53616000C is a 16Mx36bits Dynamic RAM high density memory module. The Samsung KMM53616000C consists of eight CMOS 16Mx4bits DRAMs and four CMOS 16Mx1bit DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM53616000C is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.
FEATURES
• Part Identification - KMM53616000CK(4K cycles/64ms Ref, SOJ, Solder) - KMM53616000CKG(4K cycles/64ms Ref, SOJ, Gold) • Fast Page Mode Operation • CAS-before-RAS & Hidden Refresh capability • RAS-only refresh capability • TTL compatible inputs and outputs • Single +5V±10% power supply • JEDEC standard PDpin & pinout • PCB : Height(1250mil), double sided component
PERFORMANCE RANGE
Speed -5 -6
tRAC
50ns 60ns
tCAC
13ns 15ns
tRC
90ns 110ns
tPC
35ns 40ns
PIN CONFIGURATIONS
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Symbol VSS DQ0 DQ18 DQ1 DQ19 DQ2 DQ20 DQ3 DQ21 Vcc NC A0 A1.