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KMM5364003CSW

Samsung Semiconductor

4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MBx4

DRAM MODULE KMM5364003CSW/CSWG 4Byte 4Mx36 SIMM (4Mx16 & Quad CAS 4Mx4 base) Revision 0.0 June 1999 DRAM MODULE Revi...



KMM5364003CSW

Samsung Semiconductor


Octopart Stock #: O-514382

Findchips Stock #: 514382-F

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Description
DRAM MODULE KMM5364003CSW/CSWG 4Byte 4Mx36 SIMM (4Mx16 & Quad CAS 4Mx4 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) The 4th. generation of 64Mb DRAM components are applied for this module. KMM5364003CSW/CSWG DRAM MODULE KMM5364003CSW/CSWG KMM5364003CSW/CSWG Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM5364003C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364003C consists of two CMOS 4Mx16bits and one CMOS Quad CAS 4Mx4bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM5364003C is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets. FEATURES Part Identification - KMM5364003CSW(4K cycles/64ms Ref, TSOP, Solder) - KMM5364003CSWG(4K cycles/64ms Ref, TSOP, Gold) Fast Page Mode Operation CAS-before-RAS & Hidden Refresh capability RAS-only refresh capability TTL compatible inputs and outputs Single +5V±10% power supply JEDEC standard PDpin & pinout PCB : Height(1000mil), single sided component PERFORMANCE RANGE Speed -5 -6 tRAC 50ns 60ns tCAC 13ns 15ns tRC 90ns 110ns tPC 35ns 40ns PIN CONFIGURATIONS Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Symbol VSS DQ0 DQ18 DQ1 DQ19 DQ2 DQ20 DQ3 ...




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