DRAM MODULE
KMM5364005CSW/CSWG
4Byte 4Mx36 SIMM
(4Mx16 & Quad CAS 4Mx4 base)
Revision 0.0 June 1999
DRAM MODULE
Revi...
DRAM MODULE
KMM5364005CSW/CSWG
4Byte 4Mx36 SIMM
(4Mx16 & Quad CAS 4Mx4 base)
Revision 0.0 June 1999
DRAM MODULE
Revision History
Version 0.0 (June 1999)
The 4th. generation of 64Mb DRAM components are applied for this module.
KMM5364005CSW/CSWG
DRAM MODULE
KMM5364005CSW/CSWG
KMM5364005CSW/CSWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
GENERAL DESCRIPTION
The Samsung KMM5364005C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364005C consists of two
CMOS 4Mx16bits and one
CMOS Quad CAS 4Mx4bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM5364005C is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.
FEATURES
Part Identification - KMM5364005CSW(4K cycles/64ms Ref, TSOP, Solder) - KMM5364005CSWG(4K cycles/64ms Ref, TSOP, Gold) Extended Data Out Mode Operation CAS-before-RAS & Hidden Refresh capability RAS-only refresh capability TTL compatible inputs and outputs Single +5V±10% power supply JEDEC standard PDpin & pinout PCB : Height(1000mil), single sided component
PERFORMANCE RANGE
Speed -5 -6
tRAC
50ns 60ns
tCAC
13ns 15ns
tRC
84ns 104ns
tHPC
20ns 25ns
PIN CONFIGURATIONS
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Symbol VSS DQ0 DQ18 DQ1 DQ19 DQ2 DQ20 D...