KMM5364103CK

DRAM MODULE KMM5364003CK/CKG KMM5364103CK/CKG 4Byte 4Mx36 SIMM (4Mx4 & 16M Quad CAS base) Revision 0.1 Nov. 1997 DRAM MODULE Revision History Version 0.1 (Nov. 1997) Changed the mode of parity check component from EDO to FP, refer to KMM5364003CK/CKG KMM5364103CK/CKG PACKAGE DIMENSIONS and GENERAL DISCRIPTION. DRAM MODULE KMM5364003CK/CKG KMM5364103CK/CKG KMM5364003CK/CKG & KMM5364103CK/CKG with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM53640(1)03CK is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM53640(1)03CK consists of eight CMOS 4Mx4bits DRAMs in 24-pin SOJ package and one CMOS 4Mx4 bit Quad CAS DRAM in 28-pin SOJ package mounted on a 72-pin glassepoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM53640(1)03CK is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets. FEATURES Part Identification - KMM5364003CK(4096 cycles/64ms Ref, SOJ, Solder) - KMM5364003CKG(4096 cycles/64ms Ref, SOJ, Gold) - KMM5364103CK(2048 cycles/32ms Ref, SOJ, Solder) - KMM5364103CKG(2048 cycles/32ms Ref, SOJ, Gold) Fast Page Mode Operation CAS-before-RAS refresh capability RAS-only and Hidden refresh capability TTL compatible inputs and outputs Single +5V ±10% power supply JEDEC standard PDPin & pinout PCB : Height(1000mil), single sided component PERF...