KMM5368003BSW

DRAM MODULE KMM5368003BSW/BSWG KMM5368003BSW/BSWG Fast Page Mode 8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM5368003B is a 8Mx36bits Dynamic RAM high density memory module. The Samsung KMM5368003B consists of four CMOS 4Mx16bits and two CMOS Quad CAS 4Mx4bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM5368003B is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets. FEATURES Part Identification - KMM5368003BSW(4K cycles/64ms Ref, TSOP, Solder) - KMM5368003BSWG(4K cycles/64ms Ref, TSOP, Gold) Fast Page Mode Operation CAS-before-RAS & Hidden Refresh capability RAS-only refresh capability TTL compatible inputs and outputs Single +5V±10% power supply JEDEC standard PDpin & pinout PCB : Height(1000mil), double sided component PERFORMANCE RANGE Speed -5 -6 tRAC 50ns 60ns tCAC 13ns 15ns tRC 90ns 110ns tPC 35ns 40ns PIN CONFIGURATIONS Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Symbol VSS DQ0 DQ18 DQ1 DQ19 DQ2 DQ20 DQ3 DQ21 Vcc NC A0 A1 A2 A3 A4 A5 A6 A10 DQ4 DQ22 DQ5 DQ23 DQ6 DQ24 DQ7 DQ25 A7 A11 Vcc A8 A9 RAS3 RAS2 DQ26 DQ8 Pin 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 Symbol DQ17 DQ35 Vss CAS0 CAS2 ...