KN2222

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B KN2222/A EPITAXIAL PLANAR NPN TRANSISTOR C FEATURES : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. ᴌLow Saturation Voltage : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. ᴌComplementary to the KN2907/2907A. K D E G N A ᴌLow Leakage Current H MAXIMUM RATING (Ta=25ᴱ) KN2222 KN2222A 60 30 5 600 625 150 -55ᴕ150 75 40 6 L F F M CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Ta=25ᴱ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING UNIT V V V mA mW ᴱ ᴱ 1 2 3 C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. BASE 3. COLLECTOR TO-92 1996. 1. 28 Revision No : 0 1/3 KN2222/A ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage * KN2222A KN2222 KN2222A KN2222A KN2222 KN2222A KN2222 KN2222A KN2222 KN2222A V(BR)CBO IC=10Ọ A, IE=0 SYMBOL ICEX ICBO IEBO TEST CONDITION VCE=60V, VEB(OFF)=3V VCB=50V, IE=0 VCB=60V, IE=0 VEB=3V, IC=0 MIN. 60 75 V(BR)CEO IE=10mA, IB=0 30 40 5 6 35 50 75 100 30 40 0.6 250 300 TYP. MAX. 10 10 10 10 300 0.4 0.3 1.6 1.0 1.3 1.2 2.6 2.0 8 MHz pF V V V UNIT nA nA nA V V(BR)...