SMD Type
Complementary MOSFET KON4605
TraMnOsiSsFtoErsT
■ Features
● N-Channel：VDS=30V ID=4.3A RDS(ON) ＜ 50mΩ (VGS = ...
SMD Type
Complementary
MOSFET KON4605
TraMnOsiSsFtoErsT
■ Features
● N-Channel：VDS=30V ID=4.3A RDS(ON) ＜ 50mΩ (VGS = 10V) RDS(ON) ＜ 70mΩ (VGS = 4.5V)
● P-Channel：VDS=-30V ID=-3.4A RDS(ON) ＜ 110mΩ (VGS =-10V) RDS(ON) ＜ 180mΩ (VGS =-4.5V)
DFN3*2A-8
Top View
Bottom View
S1 1 G1 2 S2 3 G2 4
Pin 1
8 D1 7 D1 6 D2 5 D2
D1 D2
G1 S1
n-channel
G2 S2
p-channel
■ Absolute Maximum Ratings TA = 25℃ unless otherwise noted
Drain-Source
Voltage Gate-Source
Voltage
Parameter
Continuous Drain Current
Pulsed Drain Current C
Power Dissipation B
Thermal Resistance.Junction- to-Ambient A Thermal Resistance.Junction- to-Ambient A D Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range
TA = 25℃ TA = 70℃
TA = 25℃ TA = 70℃ t ≤ 10s Steady-State Steady-State
Symbol VDS VGS
ID
IDM PD
RthJA
RthJC TJ Tstg
N-Channel P-Channel 30 -30 ±20 ±20 4.3 -3.4 3.4 -2.7 18 -13 1.9 1.9 1.2 1.2 65 100 50 150 -55 to 150
Unit V A W
℃/W ℃
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SMD Type
TraMnOsiSstFoErsT
Complementary
MOSFET KON4605
■ Electrical Characteristics Ta = 25℃
Parameter Drain-Source Breakdown
Voltage Zero Gate
Voltage Drain Current Gate-Body Leakage Current Gate Threshold
Voltage On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Symbol
Test Conditions
VDSS
ID=250μA, VGS=0V ID=-250μA, VGS=0V
VDS=30V, VGS=0V
VDS=30V, VGS=0V, TJ = 55℃ IDSS
VDS=-30V, VGS=0V
VDS=-30V, VGS=0V, TJ = 55℃
IGSS
VDS=0V, VGS=±20V VDS=0V, VGS=±20V
VGS(th)
VDS=VGS , ID...
