KRF4905S

SMD Type HEXFET Power MOSFET KRF4905S TO-263 Features Advanced Process Technology Surface Mount + 0 .2 8 .7 -0 .2 + 0 .1 1 .2 7 -0 .1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 175 Operating Temperature Fast Switching P-Channel Fully Avalanche Rated +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + 0 .2 5 .2 8 -0 .2 2.54 +0.2 -0.2 +0.1 5.08-0.1 + 0 .2 2 .5 4 -0 .2 + 0 .2 1 5 .2 5 -0 .2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ -10V,Tc = 25 Continuous Drain Current, VGS @ -10V,Tc = 100 Pulsed Drain Current*1 Power Dissipation Ta = 25 Power Dissipation Tc = 25 Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy*4 Avalanche Current *1 Repetitive Avalanche Energy Peak Diode Recovery dv/dt *2 Operating Junction and Storage Temperature Range Junction-to-Case Junction-to-Ambient VGS EAS IAR EAR dv/dt TJ,TSTG R R JC JA Symbol ID ID IDM PD Rating -74 -52 -260 3.8 200 1.3 20 930 -38 20 -5 -55 to + 175 0.75 40 Unit A W W/ V mJ A mJ V/ns /W /W *1Repetitive rating; pulse width limited by max. junction temperature. *2 ISD -38A, di/dt -270A/ s, VDD V(BR)DSS,TJ 175 * 3 When mounted on 1" square PCB *4 Starting TJ = 25 , L = 1.3mH,RG = 25 , IAS = -38A. 5 .6 0 1Gate gate 1 2Drain drain 2 3Source source 3 www.kexin.com.cn 1 SMD Type KRF4905S Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Th...