KRF7105

SMD Type HEXFET Power MOSFET KRF7105 Features Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching IC IC Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current VGS @ 10V Ta = 25 Continuous Drain Current VGS @ 10V Ta = 70 Pulsed Drain Current *1 Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt *2 Gate-to-Source Voltage Junction and Storage Temperature Range Maximum Junction-to-Ambient*3 dv/dt VGS TJ, TSTG R JA Symbol ID ID IDM N-Channel 3.5 2.8 14 2.0 0.016 3.0 20 P-Channel -2.3 -1.8 -10 Unit A @Tc= 25 PD W W/ -3.0 V/ ns V -55 to + 150 62.5 /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 N-Channel ISD P-Channel ISD 3.5A, di/dt -2.3A, di/dt 90A/ 90A/ s, VDD s, VDD 10sec. V(BR)DSS, TJ V(BR)DSS, TJ 150 150 *3 Surface mounted on FR-4 board, t www.kexin.com.cn 1 SMD Type KRF7105 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = 250 A VGS = 0V, ID = -250 A ID = 1mA,Reference to 25 ID = -1mA,Reference to 25 VGS = 10V, ID = 1.0A*1 VGS = 4.5V, ID = 0.5A*1 VGS = -10V, ID = -1.0A*1 VGS = -4.5V, ID = -0.50A*1 VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A VDS =15V, ID = 3.5A*1 VDS = -15V, ID = -3.5A*1 VDS = 20V, VGS = 0V VDS = -20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 55 VDS = -20V, VGS = 0...