SMD Type
HEXFET Power MOSFET KRF7307
Features
Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfe...
SMD Type
HEXFET Power
MOSFET KRF7307
Features
Generation V Technology Ultra Low On-Resistance Dual N and P Channel
Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching
IC IC
Absolute Maximum Ratings Ta = 25
Parameter 10 Sec. Pulse Drain Current, VGS @ 4.5V Ta = 25 Continuous Drain Current VGS @ 4.5V Ta = 25 Continuous Drain Current VGS @ 4.5V Ta = 70 Pulsed Drain Current *1 Power Dissipation @Ta= 25 Symbol ID ID ID IDM PD N-Channel 5.7 5.2 4.1 21 2.0 0.016 dv/dt VGS TJ, TSTG R
JA
P-Channel -4.7 -4.3 -3.4 -17
Unit
A
W W/ -5.0 V/ ns V
Linear Derating Factor (PCB Mount) Peak Diode Recovery dv/dt *2 Gate-to-Source
Voltage Junction and Storage Temperature Range Maximum Junction-to-Ambient*3 5.0
12 -55 to + 150 62.5
/W
*1 Repetitive rating; pulse width limited by max. junction temperature. *2 N-Channel ISD P-Channel ISD 2.6A, di/dt -2.2A, di/dt 100A/ 50A/ s, VDD s, VDD 10sec. V(BR)DSS, TJ V(BR)DSS, TJ 150 150
*3 Surface mounted on FR-4 board, t
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SMD Type
KRF7307
Electrical Characteristics Ta = 25
Parameter Drain-to-Source Breakdown
Voltage Breakdown
Voltage Temp. Coefficient Symbol V(BR)DSS
V(BR)DSS/
IC IC
Testconditons VGS = 0V, ID = 250 A VGS = 0V, ID = -250 A ID = 1mA,Reference to 25 ID = -1mA,Reference to 25 VGS = 4.5V, ID = 2.6A*1 VGS = 2.7V, ID = 2.2A*1 VGS = -4.5V, ID = -2.2A*1 VGS = -2.7V, ID = -1.8A*1 VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A VDS =15V, ID = 2.6A*1 VDS = -15V, ID = -2.2A*1 VDS = 16V, VGS = 0V...