SMD Type
HEXFET Power MOSFET KRF7309
IC IC
Features
Generation V Technology Ultra Low On-Resistance Dual N and P Chann...
SMD Type
HEXFET Power
MOSFET KRF7309
IC IC
Features
Generation V Technology Ultra Low On-Resistance Dual N and P Channel
Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching
Absolute Maximum Ratings Ta = 25
Parameter 10 Sec. Pulse Drain Current, VGS @ 10V Ta = 25 Continuous Drain Current VGS @ 10V Ta = 25 Continuous Drain Current VGS @ 10V Ta = 70 Pulsed Drain Current *1 Power Dissipation @Ta= 25 *3 Symbol ID ID ID IDM PD N-Channel 4.7 4.0 3.2 16 1.4 0.011 dv/dt VGS TJ, TSTG R
JA
P-Channel -3.5 -3.0 -2.4 -12
Unit
A
W W/ -6.0 V/ ns V
Linear Derating Factor (PCB Mount)*4 Peak Diode Recovery dv/dt *2 Gate-to-Source
Voltage Junction and Storage Temperature Range Junction-to-Amb. (PCB Mount, steady state)*4 6.9
20 -55 to + 150 90
/W
*1 Repetitive rating; pulse width limited by max. junction temperature. *2 N-Channel ISD P-Channel ISD *3 Pulse width 2.4A, di/dt -1.8A, di/dt 73A/ 90A/ s, VDD s, VDD 2%. V(BR)DSS, TJ V(BR)DSS, TJ 150 150
300 s; duty cycle
*4 When mounted on 1" square PCB (FR-4 or G-10 Material).
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1
SMD Type
KRF7309
Electrical Characteristics Ta = 25
Parameter Drain-to-Source Breakdown
Voltage Breakdown
Voltage Temp. Coefficient Symbol V(BR)DSS
V(BR)DSS/
IC IC
Testconditons VGS = 0V, ID = 250 A VGS = 0V, ID = -250 A ID = 1mA,Reference to 25 ID = -1mA,Reference to 25 VGS = 10V, ID = 2.4A*1 VGS = 4.5V, ID = 2.0A*1 VGS = -10V, ID = -1.8A*1 VGS = -4.5V, ID = -1.5A*1 VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A ...