KRF7313

SMD Type HEXFET Power MOSFET KRF7313 IC IC Features Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Parameter Drain- Source Voltage Gate-to-Source Voltage Continuous Drain Current, Ta = 25 Continuous Drain Current,TC = 70 Pulsed Drain Current Maximum Power Dissipation Ta = 25 *3 Maximum Power Dissipation Ta = 70 Single Pulse Avalanche Energy *4 Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt*2 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient *3 *3 EAS IAR EAR dv/dt TJ,TSTG R JA *3 *3 Symbol VDS VGS ID ID IDM PD Rating 30 20 6.5 30 2.5 2 1.3 82 4 0.2 5.8 -55 to + 150 62.5 /W mJ A mJ V/ns W A Unit V *1 Repetitive rating; pulse width limited by max. junction temperature. *2 ISD 4.0A, di/dt 74A/ s, VDD V(BR)DSS,TJ 10sec. 150 *3 Surface mounted on FR-4 board, t *4 Starting TJ=25 ,L=10mH,RG=25 , IAS=4.0A www.kexin.com.cn 1 SMD Type KRF7313 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continu...