KRF7338

SMD Type HEXFET Power MOSFET KRF7338 IC IC Features Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current,VGS@10V , Ta = 25 Continuous Drain Current ,VGS@10V , Ta = 70 Pulsed Drain Current *1 Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Maximum Junction-to-Ambient *3 Junction-to-Drain Lead VGS TJ, TSTG R R JA JL Symbol VDS ID ID IDM N-Channel 12 6.3 5.2 26 2.0 1.3 16 12 *4 P-Channel -12 -3.0 -2.5 -13 Unit V A @Ta= 25 @Ta= 70 *3 *3 PD W mV/ 8.0 V -55 to + 150 62.5 20 /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 Pulse width 400 s; duty cycle 2%. *3 Surface mounted on 1 in square Cu board. *4 The N-channel MOSFET can withstand 15V VGS max for up to 24 hours over the life of the device. www.kexin.com.cn 1 SMD Type KRF7338 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = 250 A VGS = 0V, ID = -250 A ID = 1mA,Reference to 25 ID = -1mA,Reference to 25 VGS = 4.5V, ID = 6.0A*1 VGS = 3.0V, ID = 2.0A*1 VGS = -4.5V, ID = -2.9A*1 VGS = -2.7V, ID = -1.5A*1 VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A VDS =6V, ID = 6.0A*1 VDS = -6.0V, ID = -1.5A*1 VDS = 9.6V, VGS = 0V VDS = -9.6V, VGS = 0V VDS = 9.6V, VGS = 0V, TJ = ...