KRF7343

SMD Type HEXFET Power MOSFET KRF7343 IC IC Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current,VGS@10V , Ta = 25 Continuous Drain Current ,VGS@10V , Ta = 70 Pulsed Drain Current *1 Power Dissipation Power Dissipation Gate-to-Source Voltage Single Pulse Avalanche Energy *3 Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt *2 Junction and Storage Temperature Range Maximum Junction-to-Ambient *5 @Ta= 25 @Ta= 70 *5 *5 VGS EAS IAR EAR dv/dt TJ, TSTG R JA Symbol VDS ID ID IDM PD N-Channel 55 4.7 3.8 38 2.0 1.3 20 72 4.7 0.20 5.0 P-Channel -55 -3.4 -2.7 -27 Unit V A W V 114 -3.4 mJ A mJ -5.0 V/ns -55 to + 150 62.5 /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 N-Channel ISD P-Channel ISD 4.7A, di/dt -3.4A, di/dt 220A/ -150A/ s, VDD s, VDD V(BR)DSS, TJ V(BR)DSS, TJ 150 150 *3 N-Channel Starting TJ = 25 , L = 6.5mH RG = 25 , IAS = 4.7A. P-Channel Starting TJ = 25 , L = 20mH RG = 25 , IAS = -3.4A. *5 Surface mounted on FR-4 board, t *4 Pulse width 300 s; duty cycle 10sec. 2%. www.kexin.com.cn 1 SMD Type KRF7343 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = 250 A VGS = 0V, ID = -250 A ID = 1mA,Reference to 25 ID = -1mA,Reference to 25 ...