KRF7389

SMD Type HEXFET Power MOSFET KRF7389 IC IC Features Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current Ta = 25 Continuous Drain Current Ta = 70 Pulsed Drain Current *1 Continuous Source Current (Diode Conduction) Power Dissipation @Ta= 25 @Ta= 70 Gate-to-Source Voltage Single Pulse Avalanche Energy VGS EAS IAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt *2 Junction and Storage Temperature Range Maximum Junction-to-Ambient *3 EAR dv/dt TJ, TSTG R JA Symbol VDS ID ID IDM IS PD N-Channel 30 7.3 5.9 30 2.5 2.5 1.6 20 82 4.0 0.20 3.8 P-Channel -30 -5.3 -4.2 -30 -2.5 Unit V A W V 140 -2.8 mJ A mJ -2.2 V/ns -55 to + 150 50 /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 N-Channel ISD P-Channel ISD 4.0A, di/dt -2.8A, di/dt 74A/ s, VDD s, VDD V(BR)DSS, TJ V(BR)DSS, TJ 150 150 1500A/ *3 Surface mounted on FR-4 board, t 10sec. www.kexin.com.cn 1 SMD Type KRF7389 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = 250 A VGS = 0V, ID = 250 A ID = 1mA,Reference to 25 ID = 1mA,Reference to 25 VGS = 10V, ID = 5.8A*1 VGS = 4.5V, ID = 4.7A*1 VGS = -...