SMD Type
HEXFET Power MOSFET KRF7501
IC IC
Features
Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MO...
SMD Type
HEXFET Power
MOSFET KRF7501
IC IC
Features
Generation V Technology Ulrtra Low On-Resistance Dual N-Channel
MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel Fast Switching
Absolute Maximum Ratings Ta = 25
Parameter Drain-Source
Voltage Continuous Drain Current, VGS @ 10V,Ta = 25 Continuous Drain Current, VGS @ 10V,TA = 70 Pulsed Drain Current*1 Power Dissipation Ta = 25 Power Dissipation Ta = 70 Linear Derating Factor Gate-to-Source
Voltage Single Pulse tp 10 s Gate-to-Source
Voltage Peak Diode Recovery dv/dt*1 Junction and Storage Temperature Range Junction-to-Ambient *2 * ISD 1.7A, di/dt 66A/ s, VDD V(BR)DSS,TJ 10sec. 150 VGSM VGS dv/dt TJ, TSTG R JA *1 *1 Symbol VDS ID ID IDM PD PD Rating 20 2.4 1.9 19 1.25 0.8 0.01 16 12 5 -55 to + 150 100 /W W W W/ V V V/ns A Unit A
*2 Surface mounted on FR-4 board, t
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SMD Type
KRF7501
Electrical Characteristics Ta = 25
Parameter Drain-to-Source Breakdown
Voltage Breakdown
Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold
Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward
Voltage Reverse Recovery Time Reverse RecoveryChar...