KRF7506

SMD Type HEXFET Power MOSFET KRF7506 Features Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel Fast Switching IC IC Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ -10V @ TA = 25 Continuous Drain Current, VGS @ -10V @ TA = 70 Pulsed Drain Current *1 Power Dissipation *2 Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt *3 Junction and Storage Temperature Range Maximum Junction-to-Ambient *2 VGS dv/dt TJ, TSTG R JA Symbol ID ID IDM @TA= 25 PD Rating -1.7 -1.4 -9.6 1.25 10 20 5.0 -55 to + 150 100 Unit A W m W/ V V/ns /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 Surface mounted on FR-4 board, t *3 ISD -1.2A, di/dt -140A/ s, VDD 10sec V(BR)DSS,TJ 150 www.kexin.com.cn 1 SMD Type KRF7506 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 300...