KRF7509

SMD Type HEXFET Power MOSFET KRF7509 IC IC Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current, VGS @ 10V @ Ta = 25 Continuous Drain Current, VGS @ 10V @ Ta = 70 Pulsed Drain Current *1 Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10 S Peak Diode Recovery dv/dt *2 Junction and Storage Temperature Range Maximum Junction-to-Ambient *3 VGS VGSM dv/dt TJ, TSTG R JA Symbol VDS ID ID IDM N-Channel 30 2.7 2.1 21 1.25 0.8 10 20 30 5.0 P-Channel -30 -2 -1.6 -16 Unit V A @Ta= 25 @Ta= 70 PD W m W/ V V/ns -55 to + 150 100 /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 N-Channel ISD P-Channel ISD 1.7A, di/dt -1.2A, di/dt 120A/ 160A/ s, VDD s, VDD 10sec. V(BR)DSS, TJ V(BR)DSS, TJ 150 150 *3 Surface mounted on FR-4 board, t www.kexin.com.cn 1 SMD Type KRF7509 Electrical Characteristics TJ = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = 250 A VGS = 0V, ID = -250 A ID = 1mA,Reference to 25 ID = -1mA,Reference to 25 VGS =10V, ID = 1.7A*1 VGS = 4.5V, I...