SMD Type
HEXFET Power MOSFET KRF7603
IC IC
Features
Generation V Technology Ultra Low On-Resistance N-Channel MOSFET V...
SMD Type
HEXFET Power
MOSFET KRF7603
IC IC
Features
Generation V Technology Ultra Low On-Resistance N-Channel
MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel Fast Switching
Absolute Maximum Ratings Ta = 25
Parameter Continuous Drain Current, VGS @ 4.5V,TA = 25 Continuous Drain Current, VGS @ 4.5V,TA = 70 Pulsed Drain Current*1 Power Dissipation Ta = 25 Linear Derating Factor Gate-to-Source
Voltage Peak Diode Recovery dv/dt*1 Junction and Storage Temperature Range Junction-to-Ambient *2 * ISD 3.7A, di/dt 130A/ s, VDD V(BR)DSS,TJ 10sec. 150 VGS dv/dt TJ, TSTG R JA *1 Symbol ID ID IDM PD Rating 5.6 4.5 30 1.8 14 20 5 -55 to + 150 70 /W W W/ V V/ns A Unit
*2 Surface mounted on FR-4 board, t
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SMD Type
KRF7603
Electrical Characteristics Ta = 25
Parameter Drain-to-Source Breakdown
Voltage Breakdown
Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold
Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward
Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 300µs; duty cycle 2%. Body Diode) Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS ISM VSD trr Qrr TJ = 25 , I...